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| SCT3080KL Datasheet, PDF (8/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT3080KL
ï¬Electrical characteristic curves
Datasheet
Fig.12 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage
0.32
0.28
Ta = 25ºC
Pulsed
0.24
0.2
0.16
0.12
0.08
ID = 10A
ID = 21A
0.04
0
6 8 10 12 14 16 18 20 22
Gate - Source Voltage : VGS [V]
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
0.32
VGS = 18V
0.28 Pulsed
0.24
0.2
0.16
0.12
ID = 21A
0.08
ID = 10A
0.04
0
-50
0
50 100 150 200
Junction Temperature : Tj [ºC]
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current
1
0.1
VGS = 18V
Pulsed
0.01
1
Ta = 150ºC
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = ï25ºC
10
100
Drain Current : ID [A]
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8/12
2017.08 - Rev.C
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