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SCT3080KL Datasheet, PDF (1/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT3080KL
N-channel SiC power MOSFET
Datasheet
VDSS
RDS(on) (Typ.)
ID
PD
1200V
80mï
31A
165W
ï¬Features
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
ï¬Application
ã»Solar inverters
ã»DC/DC converters
ã»Switch mode power supplies
ã»Induction heating
ã»Motor drives
ï¬Outline
TO-247N
ï¬Inner circuit
(1)(2)(3)
(2)
(1) Gate
(2) Drain
*1 (3) Source
(1)
*1 Body Diode
(3)
ï¬Packaging specifications
Packing
Tube
Reel size (mm)
-
Tape width (mm)
-
Type
Basic ordering unit (pcs)
30
Taping code
C11
Marking
SCT3080KL
ï¬Absolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Tc = 100°C
Pulsed drain current
Gate - Source voltage
Gate-Source Surge Voltage
Recommended Drive Voltage
Junction temperature
Range of storage temperature
Symbol
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
VGSS_surge
VGS_op
Tj
Tstg
Value
1200
31
22
77
ï4 to 22
ï4 to 22
0 / 18
175
ï55 to ï«175
Unit
V
A
A
A
V
V
V
°C
°C
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1/12
2017.08 - Rev.C
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