SCT3080KL Datasheet, PDF (5/14 Pages) Rohm – N-channel SiC power MOSFET

SCT3080KL
Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve
200
180
160
140
120
100
80
60
40
20
0
0
50
100
150
200
Junction Temperature : T_j [°C]
Datasheet
Fig.2 Maximum Safe Operating Area
1000
Operation in this area is limited by R_DS(ON)
100
P_W = 100µs
10
P_W = 1ms
P_W = 10ms
1
P_W = 100ms
T_a = 25ºC
Single Pulse
0.1
0.1
1
10 100
1000 10000
Drain - Source Voltage : V_DS [V]
Fig.3 Typical Transient Thermal
Resistance vs. Pulse Width
1
0.1
0.01
T_a = 25ºC
Single Pulse
0.001
0.0001 0.001 0.01 0.1
1
10
Pulse Width : P_W [s]
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2017.08 - Rev.C