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| SCT3080KL Datasheet, PDF (10/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT3080KL
ï¬Electrical characteristic curves
Datasheet
Fig.19 Typical Switching Loss
vs. Drain - Source Voltage
300
270
Ta = 25ºC
ID=10A
240
VGS = 18V/0V
210
RG=0ï
L=750ïH
180
Eon
150
120
90
60
30
Eoff
0
200
400
600
800
1000
Drain - Source Voltage : VDS [V]
Fig.20 Typical Switching Loss
vs. Drain Current
1200
1000
800
Ta = 25ºC
VDD=600V
VGS = 18V/0V
RG=0ï
L=750ïH
600
400
200
0
0
Eon
Eoff
5 10 15 20 25 30
Drain Current : ID [A]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
1200
1000
800
Ta = 25ºC
VDD=600V
ID=10A
VGS = 18V/0V
L=750ïH
600
400
Eon
200
0
0
Eoff
5 10 15 20 25 30
External Gate Resistance : RG [ï]
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
10/12
2017.08 - Rev.C
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