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SCT2750NY Datasheet, PDF (8/14 Pages) Rohm – N-channel SiC power MOSFET
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SCT2750NY
Electrical characteristic curves
Datasheet
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
2
1.8
Ta = 25ºC
Pulsed
1.6
1.4
1.2
1
ID = 3.4A
0.8
ID = 1.7A
0.6
0.4
0.2
0
8 10 12 14 16 18 20 22
Gate - Source Voltage : VGS [V]
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
2
VGS = 18V
Pulsed
1.5
1
ID = 3.4A
ID = 1.7A
0.5
0
-50
0
50
100 150 200
Junction Temperature : Tj [ºC]
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current
10
1
VGS = 18V
Pulsed
0.1
0.1
Ta = 175ºC
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = 25ºC
1
10
Drain Current : ID [A]
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2017.07 - Rev.B
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