SCT2750NY Datasheet, PDF (4/14 Pages) Rohm – N-channel SiC power MOSFET

SCT2750NY
Datasheet
Body diode electrical characteristics (Source-Drain) (T_a = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Inverse diode continuous,
forward current
Inverse diode direct current,
pulsed
I_S ^*1
I_SM ^*2
T_c = 25°C
-
-
5.9
A
-
-
14
A
Forward voltage
V_SD ^{*4 V}_GS ^{= 0V, I}_S ^{= 1.7A}
-
4.3
-
V
Reverse recovery time
t_rr ^*4
-
26
-
ns
Reverse recovery charge
Q_rr ^*4
I_F = 1.7A, V_R = 800V
di/dt = 290A/s
-
18
-
nC
Peak reverse recovery current
I_rrm ^*4
-
1.3
-
A
Typical Transient Thermal Characteristics
Symbol
Value
Unit
R_th1
243m
R_th2
1529m
K/W
R_th3
268m
Symbol
C_th1
C_th2
C_th3
Value
352µ
1.57m
68.7m
Unit
Ws/K
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2017.07 - Rev.B