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| SCT2750NY Datasheet, PDF (10/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT2750NY
ï¬Electrical characteristic curves
Datasheet
Fig.19 Typical Switching Loss
vs. Drain - Source Voltage
120
110 Ta = 25ºC
100
ID=1.7A
VGS = 18V/0V
Eon
90 RG = 0â¦
80 L=2mH
70
60
50
Eoff
40
30
20
10
0
400
600
800
1000
1200
Drain - Source Voltage : VDS [V]
Fig.20 Typical Switching Loss
vs. Drain Current
400
350
Ta = 25ºC
VDD=800V
VGS = 18V/0V
300 RG = 0â¦
L=2mH
250
Eon
200
150
100
Eoff
50
0
012345678
Drain Current : ID [A]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
200
Ta = 25ºC
VDD=800V
ID=1.7A
150 VGS = 18V/0V
Eon
L=2mH
100
Eoff
50
0
0 10 20 30 40 50 60 70 80 90 100
External Gate Resistance : RG [ï]
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© 2016 ROHM Co., Ltd. All rights reserved.
10/12
2017.07 - Rev.B
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