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SCT2750NY Datasheet, PDF (3/14 Pages) Rohm – N-channel SiC power MOSFET
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SCT2750NY
Datasheet
Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Static drain - source
on - state resistance
Gate input resistance
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
VGS = 18V, ID = 1.7A
RDS(on) *4 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
gfs *4 VDS = 10V, ID = 1.7A
Ciss
VGS = 0V
Coss VDS = 800V
Crss f = 1MHz
-
750 975 m
-
1088
-
-
49
-

-
0.6
-
S
-
275
-
-
19
-
pF
-
7
-
Effective output capacitance,
energy related
Co(er)
VGS = 0V
VDS = 0V to 800V
-
21
-
pF
Turn - on delay time
Rise time
Turn - off delay time
Fall time
td(on) *4 VDD = 500V, ID = 1.7A
-
19
-
tr *4
td(off) *4
VGS = 18V/0V
RL = 294
-
24
-
ns
-
41
-
tf *4
RG = 0
-
63
-
Turn - on switching loss
Turn - off switching loss
Eon *4
VDD = 800V, ID=1.7A
VGS = 18V/0V
-
76
-
RG = 0, L=2mH
µJ
Eoff *4
*Eon includes diode
reverse recovery
-
33
-
Gate Charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Total gate charge
Gate - Source charge
Gate - Drain charge
Qg *4
Qgs *4
Qgd *4
VDD = 500V
ID = 1.5A
VGS = 18V
-
17
-
-
5
-
nC
-
6.5
-
Gate plateau voltage
V(plateau) VDD = 500V, ID = 1.5A
-
11.0
-
V
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2017.07 - Rev.B
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