RGT16NS65D Datasheet, PDF (7/12 Pages) Rohm – 650V 8A Field Stop Trench IGBT

RGT16NS65D
lElectrical Characteristic Curves
Data Sheet
Fig.9 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
20
T_j= 25ºC
Fig.10 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
20
T_j= 175ºC
15
I_C= 16A
15
10
I_C= 8A
I_C= 4A
5
I_C= 16A
10
I_C= 8A
I_C= 4A
5
0
5
10
15
20
Gate To Emitter Voltage : V_GE [V]
0
5
10
15
20
Gate To Emitter Voltage : V_GE [V]
Fig.11 Typical Switching Time
vs. Collector Current
1000
Fig.12 Typical Switching Time
vs. Gate Resistance
1000
100
t_f
t_d(off)
10
t_d(on)
t_r
1
0
5
V_CC=400V, V_GE=15V
R_G=10Ω, T_j=175ºC
Inductive ｌoad
10
15
20
Collector Current : I_C [A]
t_f
100
t_d(off)
t_r
10
t_d(on)
1
0
10
V_CC=400V, I_C=8A
V_GE=15V, T_j=175ºC
Inductive ｌoad
20
30
40
50
Gate Resistance : R_G [Ω]
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
7/11
2014.05 - Rev.A