RGT16NS65D Datasheet, PDF (5/12 Pages) Rohm – 650V 8A Field Stop Trench IGBT

RGT16NS65D
lElectrical Characteristic Curves
Data Sheet
Fig.1 Power Dissipation vs. Case Temperature
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
Case Temperature : Tc [ºC]
Fig.2 Collector Current vs. Case Temperature
20
15
10
　⁵
TV^TV_jG≦^jG_E^≦_≧1_E7_≧¹₁₅₅⁷℃_V155ºVC
0
0 25 50
75 100 125 150 175
Case Temperature : Tc [ºC]
Fig.3 Forward Bias Safe Operating Area
1000
100
10µs
10
1
100µs
0.1
0.01
1
T_C= 25ºC
Single Pulse
10
100
1000
Collector To Emitter Voltage : V_CE[V]
Fig.4 Reverse Bias Safe Operating Area
30
25
20
15
10
5
T_j≦175ºC
V_GE=15V
0
0
200
400
600
800
Collector To Emitter Voltage : V_CE[V]
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5/11
2014.05 - Rev.A