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RGT16NS65D Datasheet, PDF (6/12 Pages) Rohm – 650V 8A Field Stop Trench IGBT
RGT16NS65D
lElectrical Characteristic Curves
Fig.5 Typical Output Characteristics
24
Tj= 25ºC
20
VGE= 20V
16
VGE= 15V
VGE= 12V
12
VGE= 10V
8
4
VGE= 8V
0
0
1
2
3
4
5
Collector To Emitter Voltage : VCE[V]
Data Sheet
Fig.6 Typical Output Characteristics
24
Tj= 175ºC
20
VGE= 20V
VGE= 15V
16
VGE= 12V
12
VGE= 10V
8
VGE= 8V
4
0
0
1
2
3
4
5
Collector To Emitter Voltage : VCE[V]
Fig.7 Typical Transfer Characteristics
16
VCE= 10V
14
12
Fig.8 Typical Collector To Emitter Saturation Voltage
vs. Junction Temperature
4
VGE= 15V
IC= 16A
3
10
IC= 8A
8
2
6
4
Tj= 175ºC
2
Tj= 25ºC
0
0
2
4
6
8 10 12
1
IC= 4A
0
25 50 75 100 125 150 175
Gate To Emitter Voltage : VGE [V]
Junction Temperature : Tj [ºC]
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2014.05 - Rev.A