SH8M70_10 Datasheet, PDF (6/8 Pages) Rohm – 10V Drive Nch+Pch MOSFET

SH8M70
10
1
Ta=125°C
75°C
25°C
-25°C
VGS=10V
0.1 ^Pulsed
0.1
1
10
Drain Current : -ID(A)
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current
1000
100
10
1
0.1
1
10
Reverse Drain Current : -IDR (A)
Fig.10 Reverse Recovery Time vs.
Reverse Drain Current
10
VDS=10V
Pulsed
1
Ta=-25°C
0.1
25°C
75°C
125°C
0.01
0.01
0.1
1
10
Drain Current : -ID(A)
Fig.8 Forward Transfer Admittance
vs. Drain Current
5 _VGS=10V
Pulsed
4
3
2
ID=2.5A
1.25A
1
0
-50 -25
0 25 50 75 100 125 150
Temperature : Tch (°C)
Fig.11 Static Drain-Source On-State
Resistance vs.Channel Temperature
Data Sheet
5
4
3
2
1
VDS=10V
ID=1mA
0
-50 -25 0 25 50 75 100 125 150
Channel Temperature : Tch: (°C)
Fig.9 Gate Threshold Voltage
vs. Channel Temperature
(X-1)
2
1.8
1.6
1.4
1.2
1
0.8
VGS=-10V
-9V
-8V
-7V _-6V
TC=25°C
Single Pulsed
-5V
0.6
0.4
0.2
-4V
0
0
2
4
6
8
10
Drain-Sourse Voltage : -VDS(V)^(X-1)
Fig.12 Typical Output Characteristics
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2010.06 - Rev.B