SH8M70_10 Datasheet, PDF (3/8 Pages) Rohm – 10V Drive Nch+Pch MOSFET

SH8M70
P-ch
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 μA VGS=±15V, VDS=0V
Drain-source breakdown voltage V(BR) DSS −250 −
−
V ID= −1mA, VGS=0V
Zero gate voltage drain current IDSS
−
− −25 μA VDS= −250V, VGS=0V
Gate threshold voltage
VGS (th) −2.0 − −4.0 V VDS= −10V, ID= −1mA
Static drain-source on-state
resistance
RDS
∗
(on)
−
2.2 2.8
Forward transfer admittance
Yfs ^∗ 1.0
−
−
Ω ID= −1.25A, VGS= −10V
S ID= −1.25A, VDS= −10V
Input capacitance
Ciss
− 250 −
pF VDS= −25V
Output capacitance
Coss
−
40
−
pF VGS=0V
Reverse transfer capacitance Crss
− 10 − pF f=1MHz
Turn-on delay time
td (on) ^∗
−
9
−
ns ID= −1.25A, VDD −125V
Rise time
tr ^∗ −
15
−
ns VGS= −10V
Turn-off delay time
td (off) ^∗
−
30
−
ns RL=100Ω
Fall time
tf ^∗ −
20
−
ns RG =10Ω
Total gate charge
Qg ^∗ −
8
− nC VDD −125V, ID= −2.5A
Gate-source charge
Qgs ^∗ −
2.5
−
nC VGS= −10V
Gate-drain charge
Qgd ^∗ −
2.8
−
nC RL=50Ω, RG =10Ω
∗Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter
Forward voltage
∗Pulsed
Symbol Min. Typ. Max. Unit
VSD ^∗ −
− −1.5 V
Conditions
IS=−2.5A, VGS=0V
Data Sheet
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2010.06 - Rev.B