SH8M70_10 Datasheet, PDF (4/8 Pages) Rohm – 10V Drive Nch+Pch MOSFET

SH8M70
N-ch
Electrical characteristic curves
1000
Ciss
100
Coss
10
f=1MHz
VGS=0V
Ta=25°C
Crss
1 ^Pulsed
0.01 0.1
1
10 100
Drain-Source Voltage : VDS(V)
1000
Fig.1 Typical Capacitance vs.
Drain-Source Voltage
15
10
5
Ta=25°C
VDD=125V
ID=3A
0
Pulsed
01234567
Total Gate Charge : Qg(nC)
Fig.4 Dynamic Input Characteristics
10
VGS=0V
Pulsed
1
Ta=-25°C
25°C
75°C
125°C
0.1
0
0.2 0.4 0.6 0.8 1 1.2
Source-Drain Voltage : VSD(V)
Fig.7 Source Current vs.
Source-Drain Voltage
Data Sheet
10000
1000
100
tf
td(off)
Ta=25°C
VDD=125V
VGS=10V
RG=10Ω
Pulsed
td(on)
10
tr
1
0.01
0.1
1
10
Drain Current : ID(A)
Fig.2 Switching Characteristics
10
VDS=10V
Pulsed
1
Ta=-25°C
0.1
25°C
75°C
125°C
0.01
0
2
4
6
8
Gate-Source Voltage : VGS (V)
Fig.5 Typical Transfer
Characteristics
10 _VGS=10V
Pulsed
1
Ta=125°C
75°C
25°C
-25°C
0.1
0.1
1
10
Drain Current : ID(A)
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current
1000
100
10
Ta=25°C
di/dt=100A/μs
VGS=0V
1
Pulsed
0.1
1
10
Reverse Drain Current : IDR(A)
Fig.3 Reverse Recovery Time vs.
Reverse Drain Current
10
Ta=25°C
9
Pulsed
8
7
6
5
4
3
2
1.5A ID=3A
1
0
0
5
10
15
20
Gate-Source Voltage : VGS(V)
Fig.6 Static Drain-Source On-State
Resistance vs.Gate-Source Voltage
3
VGS=10V
Pulsed
2.5
2
1.5
ID=3.0A
1.5A
1
0.5
0
-50 -25 0 25 50 75 100 125 150
Temperature : Tch (°C)
Fig.9 Static Drain-Source On-State
Resistance vs. Channel Temperature
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2010.06 - Rev.B