SH8M70_10 Datasheet, PDF (2/8 Pages) Rohm – 10V Drive Nch+Pch MOSFET

SH8M70
N-ch
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Gate-source leakage
IGSS
−
− ±10 μA VGS=±25V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 250 −
Zero gate voltage drain current IDSS
−
−
−
V ID=1mA, VGS=0V
25 μA VDS=250V, VGS=0V
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
VGS (th)
∗
RDS (on)
Yfs ^∗
2.0
−
0.75
−
1.25
−
4.0
1.63
−
V VDS=10V, ID=1mA
Ω ID=1.5A, VGS=10V
S ID=1.5A, VDS=10V
Input capacitance
Ciss
− 180 −
pF VDS=25V
Output capacitance
Coss
−
70
−
pF VGS=0V
Reverse transfer capacitance Crss
− 20 − pF f=1MHz
Turn-on delay time
td (on) ^∗
−
10
−
ns ID=1.5A, VDD 125V
Rise time
tr ^∗ −
20
−
ns VGS=10V
Turn-off delay time
td (off) ^∗
−
20
−
ns RL=83Ω
Fall time
tf ^∗ −
25
−
ns RG =10Ω
Total gate charge
Qg ^∗ −
5.2
−
nC VDD 125V
Gate-source charge
Qgs ^∗ −
2.1
−
nC VGS=10V ID=3A
Gate-drain charge
Qgd ^∗ −
1.2
−
nC RL=42Ω RG =10Ω
∗Pulsed
Body diode characteristics (Source-Drain) (Ta=25C)
Parameter
Forward voltage
∗Pulsed
Symbol Min. Typ. Max. Unit
VSD ^∗ −
− 1.5 V
Conditions
IS=3A, VGS=0V
Data Sheet
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2010.06 - Rev.B