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| SCT2120AF Datasheet, PDF (4/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT2120AF
Data Sheet
ï¬Body diode electrical characteristics (Source-Drain) (Ta = 25ï°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Inverse diode continuous,
forward current
Inverse diode direct current,
pulsed
Forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
IS *1
ISM *2
Tc = 25ï°C
VSD *3
trr *3
Qrr *3
Irrm *3
VGS = 0V, IS = 10A
IF = 10A, VR = 400V
di/dt = 160A/ïs
-
-
29
A
-
-
72
A
-
4.3
-
V
-
33
-
ns
-
53
-
nC
-
3.0
-
A
ï¬Typical Transient Thermal Characteristics
Symbol
Value
Unit
Rth1
96.1m
Rth2
404m
K/W
Rth3
196m
Symbol
Cth1
Cth2
Cth3
Value
1.55m
5.23m
83.3m
Unit
Ws/K
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
4/13
2013.12 - Rev.A
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