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| SCT2120AF Datasheet, PDF (11/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT2120AF
ï¬Electrical characteristic curves
Data Sheet
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
100
VGS = 0V
Pulsed
10
Ta = 150ºC
1
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
1000
Ta = 25ºC
di / dt = 160A / µs
VR = 400V
VGS = 0V
Pulsed
100
0.01
0
12345678
Source - Drain Voltage : VSD [V]
10
1
10
100
Inverse Diode Forward Current : IS [A]
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© 2013 ROHM Co., Ltd. All rights reserved.
11/13
2013.12 - Rev.A
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