SCT2120AF Datasheet, PDF (2/14 Pages) Rohm – N-channel SiC power MOSFET

SCT2120AF
Thermal resistance
Parameter
Thermal resistance, junction - case
Soldering temperature, wavesoldering for 10s
Data Sheet
Symbol
R_thJC
T_sold
Values
Unit
Min. Typ. Max.
-
0.70 0.91 C/W
-
-
265 C
Electrical characteristics (T_a = 25C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Drain - Source breakdown
voltage
V_(BR)DSS V_GS = 0V, I_D = 1mA
650
-
-
V
Zero gate voltage
drain current
V_DS = 650V, V_GS = 0V
I_DSS T_j = 25C
-
T_j = 150°C
-
1
10
A
2
-
Gate - Source leakage current
I_GSS+ V_GS = +22V, V_DS = 0V
-
-
100 nA
Gate - Source leakage current
I_GSS- V_GS = -6V, V_DS = 0V
-
-
-100 nA
Gate threshold voltage
V_{GS (th)} V_DS = V_GS, I_D = 3.3mA
1.6
-
4.0
V
Static drain - source
on - state resistance
V_GS = 18V, I_D = 10A
R_DS(on) ^*3 T_j = 25C
T_j = 125°C
-
120 156 m
-
149
-
Gate input resistance
R_G f = 1MHz, open drain
-
13.8
-

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2/13
2013.12 - Rev.A