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| SCT2120AF Datasheet, PDF (1/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT2120AF
N-channel SiC power MOSFET
Datasheet
VDSS
RDS(on) (Typ.)
ID
PD
650V
120mï
29A
165W
ï¬Features
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
5) Simple to drive
6) Pb-free lead plating ; RoHS compliant
ï¬Application
ã»Solar inverters
ã»DC/DC converters
ã»Switch mode power supplies
ã»Induction heating
ã»Motor drives
ï¬Outline
TO220AB
ï¬Inner circuit
(2)
(1) Gate
(2) Drain
*1
(3) Source
(1)
*1 Body Diode
(3)
ï¬Packaging specifications
Packing
Tube
Reel size (mm)
-
Tape width (mm)
-
Type
Basic ordering unit (pcs)
50
Taping code
-
Marking
SCT2120AF
ï¬Absolute maximum ratings (Ta = 25ï°C)
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Tc = 25ï°C
Tc = 100ï°C
Gate - Source voltage
Power dissipation (Tc = 25ï°C)
Junction temperature
Range of storage temperature
Symbol
Value
Unit
VDSS
650
V
ID *1
29
A
ID *1
20
A
ID,pulse *2
72
A
VGSS
-6 to 22
V
PD
165
W
Tj
175
ï°C
Tstg
-55 to ï«175
ï°C
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/13
2013.12 - Rev.A
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