BD9361GUL Datasheet, PDF (23/27 Pages) Rohm – 6ch Internal Power MOSFET System Switching Regulator + 1ch LDO

BD9361GUL
●Usage Notes
1.） Absolute Maximum Ratings
Although the quality of this product has been tightly controlled, deterioration or even destruction may occur if the absolute maximum
ratings, such as for applied pressure and operational temperature range, are exceeded. Furthermore, we are unable to assume short or
open mode destruction conditions. If special modes which exceed the absolute maximum ratings are expected, physical safely
precautions such as fuses should be considered.
2.） GND Potential
The potential of the GND pin should be at the minimum potential during all operation status
In addition, please try to do not become electric potential below GND for the terminal other than NON5 including the transient
phenomenon in practice.
Please do not go down below 0.3V for the NON5 terminal with transient phenomenon and the like when you use.
3.） Heat Design
Heat design should consider tolerance dissipation (Pd) during actual use and margins which should be set with plenty of room.
4.） Short-circuiting Between Terminals and Incorrect Mounting
When attaching to the printed substrate, pay special attention to the direction and proper placement of the IC. If the IC is attached
incorrectly, it may be destroyed. Destruction can also occur when there is a short, which can be caused by foreign objects entering between
outputs or an output and the power GND.
5.） Operation in Strong Magnetic Fields
Exercise caution when operating in strong magnet fields, as errors can occur.
6.） About common impedance
Please do sufficient consideration for the wiring of power source and GND with the measures such as lowering common impedance, making
ripple as small as possible (making the wiring as thick and short as possible, dropping ripple from L.C) and the like.
7.）STB terminal voltage
When you set each channel to standby, set STB terminal voltage as less than 0.3V, and when you set each channel to active, set STB
terminal voltage as more than 1.5V. Use capacitor less than 0.01uF, when you connect STB terminal to capacitor. It becomes a cause of
malfunction.
8.) Heat Protection Circuit (TSD circuit)
This IC has a built-in Temperature Protection Circuit (TSD circuit). The temperature protection circuit (TSD circuit) is only to cut off the IC
from thermal runaway, and has not been designed to protect or guarantee the IC. Therefore, the user should not plan to activate this
circuit with continued operation in mind.
9.) Rush current at the time of power supply injection.
An IC which has plural power supplies, or CMOS IC could have momentary rush current at the time of power supply injection.
Please take care about power supply coupling capacity and width of power Supply and GND pattern wiring.
10.) Influence by strong light
When large amount of light like strobe is come in，IC can act under wrong operation. Please make light removal system and check
operations adequately.
11.) IC Terminal Input
This IC is a monolithic IC, and between each element there is a P+ isolation and P substrate for element separation. There is a P-N junction
formed between this P-layer and each element’s N-layer, which makes up various parasitic elements.
For example, when resistance and transistor are connected with a terminal as in figure 36:
〇 When GND>(terminal A) at the resistance, or GND>(terminal B) at the transistor (NPN), the P-N junction operates as a parasitic diode.
〇 Also, when GND>(terminal B) at the transistor, a parasitic NPN transistor operates by the N-layer of other elements close to the
aforementioned parasitic diode.
With the IC’s configuration, the production of parasitic elements by the relationships of the electrical potentials is inevitable.
The operation of the parasitic elements can also interfere with the circuit operation, leading to malfunction and even destruction.
Therefore, uses which cause the parasitic elements to operate, such as applying voltage to the input terminal which is lower than
the GND(P-substrate), should be avoided.
Resistor
（ Terminal A）
Transistor (NPN)
（ Terminal B） _B
C
E
P^＋
N
P
N
P^＋
N
P^＋
ï¼®
N
P
N
GND
（
P^＋
N
Parasitic element
P-board
P-board
Parasitic element
GND
Terminal A）
Parasitic element
GND
Fig. 28 Simplified structure of a Bipolar IC
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23
TSZ22111・14・001
TSZ02201-0Q2Q0A400010-1-2
2011.12.22 Rev.001