BDXXFC0WEFJ Datasheet, PDF (14/20 Pages) Rohm – Low saturation with PDMOS output

BDxxFC0WEFJ series
Datasheet
EN
VEN
OUT
R1
IOUT
FB
R2
※Operation Note 11 Measurement circuit (BD00FC0WEFJ)
12. EN pin
Do not make the voltage level of the chip’s enable pin at floating level or in between VEN(High) and VEN(Low). Otherwise,
the output voltage would be unstable or indefinite.
13. For a steep change of the Vcc voltage
Because MOSFET for output Transistor is used when an input voltage change is very steep, it may evoke large current.
When selecting the value of external circuit constants, please make sure that the operation on the actual application
takes these conditions into account.
14. For infinitesimal fluctuations of output voltage.
For applications that have infinitesimal fluctuations of the output voltage caused by some factors (e.g. disturbance noise,
input voltage fluctuations, load fluctuations, etc.), please take enough measures to avoid some influence (e.g. insert a
filter, etc.).
15. Over current protection circuit (OCP)
The IC incorporates an integrated over-current protection circuit that operates in accordance with the rated output
capacity. This circuit serves to protect the IC from damage when the load becomes shorted. It is also designed to limit
output current (without latching) in the event of a large and instantaneous current flow from a large capacitor or other
component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents.
However, the IC should not be used in applications characterized by the continuous or transitive operation of the
protection circuits.
16. Thermal Shutdown circuit (TSD)
The IC incorporates a built-in thermal shutdown circuit, which is designed to turn the IC off, completely, in the event of
thermal overload. It is not designed to protect the IC from damage or guarantee its operation. IC’s should not be used
after this function has activated, or in applications where the operation of this circuit is assumed.
17. In some applications, the VCC and the VOUT potential might be reversed, possibly resulting in circuit internal damage or
damage to the elements. For example, the accumulated charge in the output pin capacitor flow backward from the VOUT
to the VCC when the VCC shorts to the GND. Use a capacitor with a capacitance with less than 1000µF for reducing the
damage. We also recommend using reverse polarity diodes in series between the VCC and the GND or a bypass diode
between the VOUT and the VCC.
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TSZ22111 15 001
14/17
TSZ02201-0R6R0A600480-1-2
2013.08.27 Rev.001