BU9832GUL-W Datasheet, PDF (11/14 Pages) Rohm – Silicon Monolithic Integrated Circuit

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4.WRITE
CSB
SCK
SI
01 2 3 4 5 6 7 8
00 0 0 0 0
10
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Fig.10 WRITE CYCLE TIMING
This “Write” command writes 8bits of data into the specified address. After CS goes low,the
address need to be sent following by Op.code of “Write”. Between the rising edge of the
31th clock and it of the 32th clock, the rising edge of CS initiates high voltage cycle, which
writes the data into non-volatile memory array, but the command is cancelled if CS is high
except that period. It takes maximum 5ms in high voltage cycle (tE/W). The device does not
receive any command except for “Read Status Register” command during this high voltage
cycle.
This device is capable of writing the data of maximum 32byte into memory array at the same
time, which keep inputting two or more byte data with CS “L”after 8bits of data input.
For this Page Write commands, the six higher order bits of address are set, the four low order
address bits are internally incremented by 5bits of data input.
If more than 32 words, are transmitted the address counter “roll over”, and the previous
transmitted data is overwritten.
REV. B