RF5110G Datasheet, PDF (9/18 Pages) RF Micro Devices – 3V GSM POWER AMPLIFIER

RF5110G
Application Schematic
865MHz and 902MHz - 928MHz ISM Bands
VAPC
VAPC
VCC VCC
VCC1
10 nF
RF IN
VCC2
+
3.3
μF
1 nF
27 pF
11 nH
10 nF
10 nF
47 pF
16 15 14 13
1
12
3.3 μF
1 nF
56 pF
180 Ω
2
11
3
10
4
9
5678
8.8 nH
55 mils
47 pF
C10
18 pF
39 mils
10 Ω Ferrite 1.6 nH
10 nF
1 nF
15 pF
27 pF 27 pF
Share the same pad.
1.5 pF
VCC = 3.0 V to 3.5 V
Efficiency > 45%
POUT = 32 dBm MAX (for 100% duty cycle)
L4
3.6 nH
56 pF
C11
5 pF
C11 is
adjacent to L4.
RF OUT
Rev A3 060814
2-9