RF5110G Datasheet, PDF (7/18 Pages) RF Micro Devices – 3V GSM POWER AMPLIFIER

RF5110G
Application Schematic
150MHz FM Band
VAPC
VAPC
VCC VCC
VCC1
RF IN
10 nF
1 nF
27 pF 8.2 nH
10 nF
10 nF
47 pF
16 15 14 13
1
12
100 nH¹
10 pF
180 Ω
100 pF
2
11
3
10
4
9
5678
3.3 μF
1 nF
1 μH¹
Coilcraft
DO1608C-102
C10²
33 pF
L4
15 nH
56 pF
C11²
56 pF
RF OUT
VCC2
+
3.3
μF
10 nF
0Ω
1 nF
33 nH
1_{Requires layout change to standard evaluation board.}
2_{C10 and C11 adjacent to L4.}
VCC = 3.0 V to 3.5 V
Efficiency > 45%
POUT = 32 dBm MAX (for 100% duty cycle)
Application Schematic
220MHz FM Band
VAPC
VAPC
VCC VCC
VCC1
10 nF
1 nF
27 pF
8.2 nH
10 nF
10 nF
47 pF
16 15 14 13
1
12
3.3 μF
1 nF
RF IN
100 nH¹
10 pF
180 Ω
100 pF
2
11
3
10
4
9
5678
1 μH¹
Coilcraft
DO1608C-102
10 nH
C10²
33 pF
C11³
39 pF
VCC2
+
3.3
μF
10 nF
0Ω
1 nF
33 nH
1_{Requires layout change to standard evaluation board.}
2_{C10 is adjacent to L4.}
3_{C11 is 140 mils from L4.}
VCC = 3.0 V to 3.5 V
Efficiency > 45%
POUT = 32 dBm MAX (for 100% duty cycle)
56 pF
RF OUT
Rev A3 060814
2-7