RF5110G Datasheet, PDF (8/18 Pages) RF Micro Devices – 3V GSM POWER AMPLIFIER

RF5110G
Application Schematic
450MHz FM Band
VAPC
VAPC
VCC VCC
VCC1
10 nF
1 nF
330 pF 11 nH
10 nF
10 nF
47 pF
16 15 14 13
1
12
3.3 μF
1 nF
47 pF
RF IN
56 pF
100 Ω
2
11
3
10
4
9
5678
39 nH (1000 mA ICC)¹
Coilcraft 1206CS
L4
3.9 nH
VCC2
+ _{3.3 μF}
10 nF
10 Ω
Ferrite
1.6 nH
1 nF
15 pF
1_{Requires layout change to standard evaluation board.}
VCC = 3.0 V to 3.5 V
Efficiency > 45%
POUT = 32 dBm MAX (for 100% duty cycle)
56 pF
C11
18 pF
RF OUT
C11 adjacent
to L4.
2-8
Rev A3 060814