RFPD3580 Datasheet, PDF (6/8 Pages) RF Micro Devices – GaAs/GaN Power Doubler Hybrid

RFPD3580
RFMD + TriQuint = Qorvo
Change of Distortion Performance Over Current
Test Condition: V+=34V, TMB = 35°C; ZS = ZL = 75Ω ,VO = 63.0dBmV at 1215MHz, 22dB extrapolated tilt, 79 analog channels plus
111 digital channels (-6dB offset)
CTB change over device current, typical values
0
0,0
2,0
4,0
6,0
8,0
10,0
12,0
100
200
300
400
500
600
f [MHz]
530mA
500mA
470mA
440mA
410mA
0
0,0
-2,0
-4,0
-6,0
-8,0
-10,0
-12,0
CIN change over device current, typical values
100
200
300
400
500
600
f [MHz]
530mA
500mA
470mA
440mA
410mA
Revision DS20160304
© 2016 RF Micro Devices, Inc.
- 6 of 8 -
Disclaimer: Subject to change without notice
www.rfmd.com / www.qorvo.com