RFPD3580 Datasheet, PDF (1/8 Pages) RF Micro Devices – GaAs/GaN Power Doubler Hybrid

RFPD3580
GaAs/GaN Power Doubler Hybrid
45MHz to 1218MHz
The RFPD3580 is a Hybrid Power Doubler amplifier module. The
part employs GaAs pHEMT die and GaN HEMT die and operates
from 45MHz to 1218MHz. It provides extremely high output up to
76.8dBmV composite power or 67dBmV virtual level. DC current as
well as supply voltage of the device can be externally adjusted for
optimum distortion performance versus power consumption over a
wide range of output level.
Current setting V+
INPUT
OUTPUT
Functional Block Diagram
RFMD + TriQuint = Qorvo
RFPD3580
Package: SOT-115J
Features
■ Extremely High Output
Capability
■ Excellent Linearity
■ Superior Return Loss
Performance
■ Optimal Reliability
■ Unconditionally Stable Under
All Terminations
■ 22.5dB Min. Gain at 1218MHz
■ 550mA Max.
■ Devices works at V+ between
24V and 34V
Applications
■ 45MHz to 1218MHz CATV
Amplifier Systems
■ DOCSIS 3.1 Compliant
Ordering Information
RFPD3580
Box with 50 pieces
Revision DS20160304
© 2016RF Micro Devices, Inc.
- 1 of 8 -
Disclaimer: Subject to change without notice
www.rfmd.com / www.qorvo.com