RFPD3580 Datasheet, PDF (4/8 Pages) RF Micro Devices – GaAs/GaN Power Doubler Hybrid

RFPD3580
RFMD + TriQuint = Qorvo
Power Supply Adjustment
The RFPD3580 can be operated at a power supply voltage V+ between 24V and 34V to provide maximum required linearity
performance at minimum power consumption. Maximum output capability can be adjusted between 73.8dBmV composite power
(= 58dBmV actual level at fmax equivalent to 64dBmV virtual level) at V+ = 24V and 76.8dBmV composite power (= 61dBmV
actual level at fmax equivalent to 67dBmV virtual level) at V+ = 34V under a pure digital loading (190 channels QAM256) with
22dB tilt.
Test Condition: TMB = 35°C; ZS = ZL = 75Ω, 22dB tilt, 190 digital channels (QAM256 ITU-T J.83 Annex B)
Worst Case BER before RS
1,00E+00
1,00E-01
1,00E-02
1,00E-03
1,00E-04
1,00E-05
1,00E-06
1,00E-07
1,00E-08
1,00E-09
1,00E-10
71
72
73
74
75
76
77
78
79
Composite Power (dBmV)
V+=24V
V+=28V
V+=34V
Limit
Worst Case MER (dB)
50,0
48,0
46,0
44,0
42,0
40,0
38,0
36,0
34,0
32,0
30,0
71
72
73
74
75
76
77
Composite Power (dBmV)
Revision DS20160304
© 2016 RF Micro Devices, Inc.
V+=24V
V+=28V
V+=34V
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Disclaimer: Subject to change without notice
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