RFPD3580 Datasheet, PDF (3/8 Pages) RF Micro Devices – GaAs/GaN Power Doubler Hybrid

RFPD3580
RFMD + TriQuint = Qorvo
Parameter
Specification
Unit Condition
Min Typ Max
Distortion Data 40MHz to 550MHz. Test conditions unless otherwise noted: V+ = 34V; TMB = 35°C; ZS = ZL = 75Ω
CTB
-80 -73 ^dBc
XMOD
CSO
-75 -68 ^dBc _{VO = 63 dBmV at 1218MHz, 22dB extrapolated tilt, 79 analog channels plus 111}
-80 -74 ^{dBc digital channels (-6dB offset)[2][3]}
CIN
58 55 ^dB
1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
2. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +41 dBmV to +50.4 dBmV tilted output level, plus 111 digital channels, -
6dB offset relative to the equivalent analog carrier.
3. Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by ANSI/SCTE 6. Composite Triple Beat
(CTB) - The CTB parameter is defined by ANSI/SCTE 6. Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband
(selective voltmeter method), referenced to 100% modulation of the carrier being tested. Carrier to Intermodulation Noise (CIN) - The CIN
parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to noise).
Revision DS20160304
© 2016 RF Micro Devices, Inc.
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Disclaimer: Subject to change without notice
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