RFHA3942D Datasheet, PDF (5/9 Pages) RF Micro Devices – 35W Linear GaN on SiC Power Amplifier Die

RFHA3942D
Typical Performance of Non-Internally Matched Packaged Die in Linearity Optimized Circuit
(T = 25°C unless noted) (continued)
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
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The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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