RFHA3942D Datasheet, PDF (2/9 Pages) RF Micro Devices – 35W Linear GaN on SiC Power Amplifier Die

RFHA3942D
Absolute Maximum Ratings
Parameter
Rating
Unit
Caution! ESD sensitive device.
Drain Voltage (VD)
150
V
Gate Voltage (VG)
-8 to +2
V
Gate Current (IG)
Ruggedness (VSWR)
Storage Temperature Range
Operating Junction Temperature (TJ)
15
mA
10:1
-55 to +125
°C
250
°C
RFMD Green: RoHS compliant per EU
Directive 2011/65/EU, halogen free per
IEC 61249-2-21, <1000ppm each of
antimony trioxide in polymeric materials
and red phosphorus as a flame retardant,
and <2% antimony solder.
Human Body Model
MTTF (TJ < 200°C, 95% Confidence Limits)*
MTTF (TJ < 250°C, 95% Confidence Limits)*
Thermal Resistance, Rth (junction to case) measured
at TC = 85°C, DC bias only
Class 1A
3.2E + 06
5.3E + 04
3.0
Hours
Hours
°C/W
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
* MTTF – median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability.
Refer to product qualification report for FIT (random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current
must not exceed the maximum operating values specified in the table above.
**Thermal resistance assumes AuSn die attach on 1.5mm thick CPC carrier similar to Kyocera A1933. User will need to define this specification
in the final application and ensure bias conditions satisfy the following expression: PDISS < (TJ – TC) / RTH J-C and TC = TCASE to maintain maximum operating
junction temperature at MTTF.
Nominal Operating Parameters
Parameter
Specification
Unit
Min Typ Max
Recommended Operating
Conditions
Drain Voltage (VDSQ)
Gate Voltage (VGSQ)
Drain Bias Current (IDSQ)
Frequency of Operation
28
48
V
-1.2 -0.9 -0.6 V
300
mA
DC
4000 MHz
Die Capacitance from Packaged Device Measurements
(Package Capacitance Removed During Calibration)
CRSS
CISS
COSS
DC Functional Test
1.4
pF
15
pF VG = -8V, VD = 0V
11
pF
IG(ON) – Forward Bias Diode Gate
Current
50 mA VG = 1.1V, VD = 0V
IG(OFF) – Gate Leakage
ID(OFF) – Drain Leakage
ID(OFF) – 48V Drain Leakage
2
mA
VG = -8V, VD = 0V
0.2 mA
2.5 mA VG = -8V, ID = 48A
Condition
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS131024
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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