RFHA3942D Datasheet, PDF (1/9 Pages) RF Micro Devices – 35W Linear GaN on SiC Power Amplifier Die

RFHA3942D
35W Linear GaN on SiC Power Amplifier Die
The RFHA3942D is a 48V, 35W, GaN on SiC high power discrete
amplifier die designed for military communications, electronic
warfare, general purpose broadband, commercial wireless
infrastructure, and industrial/scientific/medical applications. Using
a second generation advanced high power density gallium nitride
(GaN) semiconductor process with improved linearity, the
RFHA3942D is able to achieve high efficiency, excellent linearity,
and flat gain over a broad frequency range in a single amplifier
design with proper packaging and assembly. The RFHA3942D is
an unmatched 0.5µm gate, GaN transistor die suitable for many
applications with > 45.5dBm saturated power, > 56% saturated
drain efficiency, and > 16.5dB small signal gain at 2GHz.
Functional Block Diagram
Ordering Information
RFHA3942D
35W Linear GaN on SiC Power Amplifier Die
RFHA3942D
Package: Die
Features
■ Broadband Operation DC to 4GHz
■ Advanced GaN HEMT Technology
■ Packaged Small Signal Gain =
16.3dB at 2GHz
■ 48V Typical Modulated Packaged
Performance
 P_OUT 39.5dBm
 Gain 16.3dB
 Drain Efficiency 32.6%
 ACP-40dBc
■ 48V Typical CW Package
Performance
 P_OUT 45.2dBm
 Gain 15.3dB
 Drain Efficiency 58%
■ Large Signal Models Available
■ Chip Dimensions: 0.96mm x
1.92mm x 0.10mm
■ Active Area Periphery: 11.1mm
Applications
■ Military Communications
■ General Purpose Broadband
Amplifiers
■ Electronic Warfare
■ Public Mobile Radios
■ Commercial Wireless Infrastructure
■ Cellular and WiMAX Infrastructure
■ Industrial, Scientific, and Medical
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
DS131024
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