RFHA3942D Datasheet, PDF (3/9 Pages) RF Micro Devices – 35W Linear GaN on SiC Power Amplifier Die

RFHA3942D
Parameter
DC Functional Test (cont’d)
ID(OFF) – 150V Drain Leakage
VGS(TH) – Threshold Voltage
VDS(ON) – Drain Voltage at High
Current
RF Typical Performance
VGS(Q)
Gain
Drain Efficiency
Output PAR (CCDF at 0.01%)
Gain
Output Power
Drain Efficiency
Specification
Unit
Min Typ Max
Condition
5.0 mA VG = -8V, VD = 150V
-1.5
V VD = 48V, ID = 11mA
1.5
V VG = 0V, ID = 1.5A
Test Conditions: VDSQ = 48V, IDSQ = 300mA, T = 25°C, IS95 (9
Channel Model)
-1.5 -0.9 -0.3
16.3
V VD = 48V, IDQ = 300mA
dB
32.6
% IS95 (9.8dB PAR at 0.01% CCDF), POUT = 39.5dBm, f = 2140MHz
6.1
dB
15.3
dB
45.2
dBm CW, f = 2140MHz
58
%
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS131024
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The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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