RFHA1101 Datasheet, PDF (5/8 Pages) RF Micro Devices – Advanced GaN HEMT Technology

RFHA1101
3_{Typical Performance at 2.7GHz When Matched to a Match Point Located Midway Between}
Points of Maximum Gain and Maximum Efficiency
[4] Test Conditions: CW Operation, f = 2700MHz, V_DSQ = 28V, I_DQ = 44.4mA, T_AMBIENT = 25ºC, measured with probes on-wafer, in
Maury Microwave Load Pull Test System.
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS131023
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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