RFHA1101 Datasheet, PDF (1/8 Pages) RF Micro Devices – Advanced GaN HEMT Technology

RFHA1101
4.3W GaN On SiC Power Amplifier
Die-On-Carrier
The RFHA1101 is a 28V, 4.3W, GaN on SiC high power discrete
amplifier die-on carrier designed for commercial wireless
infrastructure, cellular and WiMAX infrastructure,
industrial/scientific/medical, and general purpose broadband
amplifier applications. Using an advanced high power density
Gallium Nitride (GaN) semiconductor process, the RFHA1101 is
able to achieve high efficiency and flat gain over a broad
frequency range in a single amplifier design with proper heat
sinking and assembly. The RFHA1101 is an unmatched 0.5µm
gate, GaN transistor die suitable for many applications with
> 36dBm 3dB-compressed power, > 60% 3dB-compressed drain
efficiency, and > 21dB small signal gain at 2GHz.
Functional Block Diagram
Ordering Information
RFHA1101
4.3W GaN on SiC Power Amplifier Die-on-Carrier
RFHA1101
Package: Die
Features
■ Broadband Operation DC to
10GHz¹
■ Advanced GaN HEMT Technology
■ Small Signal Gain = 21.4dB at
2.14GHz
■ 28V Typical Performance
 Output Power 4.3W at P3dB
 Drain Efficiency 60% at P3dB
■ Dimensions
 GaN Die:
0.448 x 0.825 x0.1mm
 GaN Die on Heat Sink:
1.25 x 1.25 x 0.3mm
■ Active Area Periphery: 2.22mm
Applications
■ Commercial Wireless Infrastructure
■ Cellular and WiMAX Infrastructure
■ Civilian and Military Radar
■ General Purpose Broadband
Amplifiers
■ Public Mobile Radios
■ Industrial, Scientific, and Medical
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
DS131023
RF MICRO DEVICES^® and RFMD^® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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