RFHA1101 Datasheet, PDF (2/8 Pages) RF Micro Devices – Advanced GaN HEMT Technology

RFHA1101
Absolute Maximum Ratings
Parameter
Drain Voltage (VD)
Gate Voltage (VG)
Gate Current (IG)
Operational Voltage
Storage Temperature Range
Operating Junction Temperature (TJ)
MTTF (TJ < 200°C, 95% Confidence Limits)*
Thermal Resistance, RTH (Junction to case)**
measured at TC = 85°C, DC bias only.
Rating
155
-6 to +2
2.2
28
-55 to +100
200
1.8 x 10⁷
12.5
Unit
V
V
mA
V
°C
°C
Hours
°C/W
* MTTF - median time to failure for wear-out failure mode (30% IDSS degradation) which is determined
..by the technology process reliability. Refer to product qualification report for FIT (random) failure rate.
Caution! ESD sensitive device.
RFMD Green: RoHS compliant per EU
Directive 2011/65/EU, halogen free per
IEC 61249-2-21, <1000ppm each of
antimony trioxide in polymeric materials
and red phosphorus as a flame retardant,
and <2% antimony solder.
Exceeding any one or a combination of the Absolute
Maximum Rating conditions may cause permanent
damage to the device. Extended application of Absolute
Maximum Rating conditions to the device may reduce
device reliability. Specified typical performance or
functional operation of the device under Absolute
Maximum Rating conditions is not implied.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current
must not exceed the maximum operating values specified in the table above.
**User will need to define this specification in the final application and ensure bias conditions satisfy the following expression:
PDISS < (TJ - TC) / RTH J-C and TC = TCASE to maintain maximum operating junction temperature and MTTF.
Nominal Operating Parameters
Parameter
Specification
Unit
Min Typ Max
Condition
Recommended Operating
Conditions
Drain Voltage (VDSQ)
Gate Voltage (VGSQ)
Drain Bias Current
Frequency of Operation
DC Functional Test
28
V
-0.96
V VD = 28V, ID = 44mA
44
mA
DC
10 GHz Based on 10dB power gain, calculated from fMAX
VG (on) - Forward Bias Diode Gate
Voltage
0.4 0.95 1.2
V IG = 2.22mA, VD = 0V
BV (off) - Drain Breakdown Voltage 100 >150
V VG = -4V, ID = 2.22mA
VPO - Threshold Voltage
-1.9 -1.48 -1.1 V VD = 20V, ID = 2mA
Die Capacitance from on-wafer CV measurements
CRSS
60
fF VD = 28V, ID = 44mA
CISS
5460
fF VD = 28V, ID = 44mA
COSS
895
fF VD = 28V, ID = 44mA
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS131023
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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