RFHA1101 Datasheet, PDF (3/8 Pages) RF Micro Devices – Advanced GaN HEMT Technology

RFHA1101
Parameter
Specification
Unit
Min Typ Max
Condition
RF Small Signal Figures of Merit
On-Wafer Test
FT
10
FMAX (based on GTU)
32
FT
7
FMAX (based on GTU)
27
RF Typical Load Pull Performance
Gain
21.4
Gain
19.4
Output Power at P3dB
36.3
Output Power at P3dB
35.8
Drain Efficiency at P3dB
60
Drain Efficiency at P3dB
60
GHz
GHz
GHz
GHz
dB
dB
dBm
dBm
%
%
VD = 28V, ID = 170mA
VD = 28V, ID = 170mA
VD = 28V, ID = 44mA
VD = 28V, ID = 44mA
On-Wafer Tests [1,2,3,4]
VDQ = 28V, IDQ = 44mA, CW, f = 2140MHz, trade match¹
VDQ = 28V, IDQ = 44mA, CW, f = 2700MHz, trade match³
VDQ = 28V, IDQ = 44mA, CW, f = 2140MHz
VDQ = 28V, IDQ = 44mA, CW, f = 2700MHz
VDQ = 28V, IDQ = 44mA, CW, f = 2140MHz
VDQ = 28V, IDQ = 44mA, CW, f =2700MHz
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS131023
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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