RFAM3790 Datasheet, PDF (5/7 Pages) RF Micro Devices – 45-1218MHZ GAAS EDGE QAM INTEGRATED AMPLIFIER

RFAM3790
Evaluation Board Schematic
Power
Enable
Att.
Adjust
GND
RF INPUT
C8
4.7nF
C9
1
4.7nF
2
C2
4.7nF
T1
RFXF0006
3
4
C1
D1
DNI
TQP200002
25V
9
8
U1
RFAM3790
7
6
5
FB1
Bead 60Ω
V+
R1
2.7kΩ
D3
TGL34-33A
C3
4.7nF
D2
MM3Z5V6T1
T2
RFXF0008
C4
4.7nF
T3
RFXF0009
C5
4.7nF
C6
4.7nF
D4
C7
TQP200002
DNI
25V
RF OUTPUT
Evaluation Board Bill of Materials (BOM)
Designator
C1
C2, C3, C4, C5,
C6, C8, C9
C7
R1
FB1
D1, D4
D2
D3
T1
T2
T3
U1
Value
DNI
4.7nF
DNI
2.7kΩ
60Ω @ 100MHz
25V
5.6V
33V
1:1
2.8:1
1:1
Description
optional to improve matching in application
Capacitor, X7R, 50V, 10%
optional to improve matching in application
Resistor, TK200, 5%
Impedance Bead, DCR 0.1Ohm, 800mA
ESD Protection
Zener Diode, 200mW
Transient Suppressor Diode, 5%
Transformer
Transformer
Transformer
Amplifier
Manufacturer
Taiyo Yuden
Triquint
On Semiconductor
Diotec
RFMD
RFMD
RFMD
RFMD
Part Number
BK 1608HS600-T
TQP200002
MM3Z5V6T1G
TGL34-33A
RFXF0006
RFXF0008
RFXF0009
RFAM3790
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
DS140820
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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