RFAM3790 Datasheet, PDF (1/7 Pages) RF Micro Devices – 45-1218MHZ GAAS EDGE QAM INTEGRATED AMPLIFIER

RFAM3790
45-1218MHZ GAAS
EDGE QAM INTEGRATED AMPLIFIER
The RFAM3790 is an Integrated Edge QAM Amplifier Module.
The part employs GaAs pHEMT die, GaAs MESFET die, a 20dB
range variable attenuator and a power enable feature, has high
output capability, and is operated from 45MHz to 1218MHz. It
provides excellent linearity and superior return loss performance
with low noise and optimal reliability.
Power Enable
V+
INPUT
OUTPUT
Preamp
Driver
Att. adjust
Functional Block Diagram
Ordering Information
RFAM3790SB
RFAM3790SQ
RFAM3790SR
RFAM3790TR7
RFAM3790TR13
RFAM3790PCBA-410
RFAM3790PCK-410
Sample bag with 5 pieces
Sample bag with 25 pieces
7” Reel with 100 pieces
7” Reel with 250 pieces
13” Reel with 750 pieces
Fully Assembled Evaluation Board
Fully Assembled Evaluation Board with
Sample Bag
Package: 9 pin,
11.0 mm x 11.0 mm x 1.375mm
Features
 Excellent Linearity
 Extremely High Output Capability
 Voltage Controlled Attenuator
 Power Enable Featrure
 Extremely Low Distortion
 Optimal Reliability
 Low Noise
 Unconditionally Stable Under all
Terminations
 27.5 dB Typical Gain at 1218MHz
 410mA Typical at 12VDC
Applications
 45MHz to 1218MHz Downstream
Edge QAM RF Modulators
 Headend Equipment
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
DS140820
RF MICRO DEVICES^® and RFMD^® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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