RFAM3790 Datasheet, PDF (3/7 Pages) RF Micro Devices – 45-1218MHZ GAAS EDGE QAM INTEGRATED AMPLIFIER

RFAM3790
Parameter
Distortion
Adjacent Channel Power Ratio (ACPR);
N=4 contiguous 256QAM channels
Specification
Min Typ Max
-58
-60
-63
-65
2^nd Order Harmonic (HD2); N=1
-63
256QAM channel
3^rd Order Harmonic (HD3); N=1
256QAM channel
CTB
XMOD
CSO
CIN
CTB
XMOD
CSO
CIN
-63
-67
-60
-70
64
-67
-61
-70
65
Unit
Condition
V+= 12V; TMB=30°C; ZS=ZL=75Ω; Att=0dB
dBc Channel Power = 58dBmV; Adjacent channel up to 750 kHz
from channel block edge
dBc Channel Power = 58dBmV; Adjacent channel (750 kHz from
channel block edge to 6MHz from channel block edge)
dBc Channel Power = 58dBmV; Next-adjacent channel (6 MHz from
channel block edge to 12 MHz from channel block edge)
dBc Channel Power = 58dBmV; Third-adjacent channel (12 MHz
from channel block edge to 18 MHz from channel block edge)
dBc Channel Power = 66dBmV; In each of 2N contiguous 6 MHz
channels coinciding with 2nd harmonic components (up to
1000MHz);
dBc Channel Power = 66dBmV; In each of 3N contiguous 6 MHz
channels coinciding with 3rd harmonic components (up to
1000MHz);
dBc
dBc
dBc
V(-6O=d4B6odfBfsmetV),_[4f_]l_,a_[6t_], 79 analog channels plus 75 digital channels
dB
dBc
dBc
dBc
V(-6O=d4B5odfBfsmetV),_[5f_]l_,a_[6t_], 79 analog channels plus 111 digital channels
dB
1. The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
2. Logic high is defined as power enable voltage >2V
3. Logic low is defined as power enable voltage <0.4V
4. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +46dBmV flat output level, plus 75 digital channels, -6dB
offset relative to the equivalent analog carrier.
5. 79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +45dBmV flat output level, plus 111 digital channels,
-6dB offset relative to the equivalent analog carrier.
6. Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by the NCTA. Composite
Triple Beat (CTB) - The CTB parameter is defined by the NCTA. Cross Modulation (XMOD) - Cross modulation (XMOD) is
measured at baseband (selective voltmeter method), referenced to 100% modulation of the carrier being tested. Carrier to
Intermodulation Noise (CIN) - The CIN parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to noise).
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [e-mail].
DS140820
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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