RF5110G_07 Datasheet, PDF (20/22 Pages) RF Micro Devices – 3V GSM POWER AMPLIFIER

RF5110G
RF5110G 450 MHz Gain and Efficiency Versus P_OUT/V_CC
48
60
46
55
50
44
45
42
40
40
35
38
30
36
2.8 V gain
25
3.3 V gain
34
2.8 V eff
20
3.3 V eff
15
32
10
30
5
28
0
26
27
28
29
30
31
32
33
34
35
P_OUT (dBm)
40
39
38
37
36
35
34
33
32
31
30
29
28
27
27
RF5110G 865 MHz to 928 MHz Gain and Efficiency Versus POUT/VCC
865 MHz gain 2.8V
928 MHz gain 2.8V
865 MHz gain 3.3V
928 MHz gain 3.3V
865 MHz gain 3.6V
928 MHz gain 3.6V
865 MHz eff 2.8V
928 MHz eff 2.8V
865 MHz eff 3.3V
928 MHz eff 3.3V
865 MHz eff 3.6V
928 MHz eff 3.6V
28
29
30
31
32
33
P_IN (dBm)
55
50
45
40
35
30
25
20
15
10
34
RF5110G 450 MHz Junction Temperature Versus POUT/VCC
Ambient Temperature = 85°C
158
156
154
152
150
148
146
144
142
140
138
136
134
2.8 V
132
3.3 V
130
128
26
27
28
29
30
31
32
33
34
35
P_OUT (dBm)
160
158
156
154
152
150
148
146
144
142
140
138
136
134
132
130
128
126
124
122
120
27
RF5110G 865 MHz to 928 MHz Junction Temperature Versus POUT/VCC
Ambient Temperature = 85°C
2.8V 865 MHz
2.8V 928 MHz
3.3V 865 MHz
3.3V 928 MHz
3.6V 865 MHz
3.6V 928 MHz
28
29
30
31
32
33
34
P_IN (dBm)
20 of 22
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
Rev A4 DS071026