RF5110G_07 Datasheet, PDF (19/22 Pages) RF Micro Devices – 3V GSM POWER AMPLIFIER

RF5110G
RF5110G 153 MHz Gain and Efficiency Versus P_OUT/V_CC
40
80
38
75
36
70
34
65
32
60
30
55
28
50
26
45
24
153 MHz gain 3.6 V
40
153 MHz gain 3.3 V
153 MHz gain 3.0 V
22
153 MHz eff 3.6 V
35
153 MHz eff 3.3 V
153 MHz eff 3.0 V
20
30
27.5 28.0 28.5 29.0 29.5 30.0 30.5 31.0 31.5 32.0 32.5
P_OUT (dBm)
RF5110G 220 MHz Gain and Efficiency Versus P_OUT/V_CC
49
60
47
55
45
50
43
45
41
40
39
35
37
30
35
25
33
20
31
15
29
2.8 V gain
3.3 V gain
10
3.6 V gain
27
2.8 V eff
5
3.3 V eff
25
3.6 V eff
0
26
27
28
29
30
31
32
33
34
35
P_OUT (dB)
RF5110G 153 MHz Junction Temperature Versus POUT/VCC
Ambient Temperature = 85°C
142
140
138
136
134
132
130
128
126
153 MHz 3.6 V
124
153 MHz 3.3 V
122
153 MHz 3.0 V
120
27.5 28.0 28.5 29.0 29.5 30.0 30.5 31.0 31.5 32.0 32.5
P_OUT (dBm)
RF5110G 220 MHz Junction Temperature Versus POUT/VCC
Ambient Temperature = 85°C
160
155
150
145
140
135
130
125
120
115
110
2.8 V
3.3 V
105
3.6 V
100
26
27
28
29
30
31
32
33
34
35
P_OUT (dBm)
Rev A4 DS071026
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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