RF5110G_07 Datasheet, PDF (13/22 Pages) RF Micro Devices – 3V GSM POWER AMPLIFIER

RF5110G
Evaluation Board Schematic
GSM850 Lumped Element
J3
VAPC
50 Ω μstrip
VCC VCC
VAPC
C18
3.3 μF
VCC1
C2
C3
10 nF
1 nF
C19
27 pF
L1
11 nH
C17
10 nF
C16
10 nF
C15
33 pF
16 15 14 13
1
12
C13
1 nF
C14
33 pF
J1
RF IN
50 Ω μstrip
C1
56 pF
R1
180 Ω
2
3
4
5
VCC2
+ C21
3.3 μF
L2
L6
10 Ω Ferrite 1.6 nH
C5
C6
10 nF 1 nF
C20
13 pF
C7
33 pF
11
10
9
678
C8
1.5 pF
L3
8.8 nH
60 mils
C9
15 pF
C10
2 pF
65 mils
C9 and C10 share
the same pad.
P1
P1-1 1 VCC
P1-2 2 VCC
3 GND
4 GND
CON4
P2
P2-1 1 VAPC
2 GND
3 GND
CON3
L4
1.8 nH
40 mils
C11
9.1 pF
C12
56 pF
50 Ω μstrip
J2
RF OUT
Rev A4 DS071026
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
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