RF5623 Datasheet, PDF (1/18 Pages) RF Micro Devices – SINGLE 5.0V, 3.3 TO 3.8 GHZ LINEAR POWER AMPLIFIER

RF5623Single
5.0V, 3.3 to
3.8 GHz Linear
Power Ampli-
fier
RF5623
SINGLE 5.0V, 3.3 TO 3.8 GHZ
LINEAR POWER AMPLIFIER
Package Style: QFN, 16-Pin, 3mmx3mmx0.45mm
Features
 High Gain; 32dB
 2.5% EVM (RMS) at 26dBm,
5.0 V
 Integrated Power Detector
 High Impedance Enable
 Integrated Input Match
 Footprint compatible to RF5602
Applications
 WiMAX Customer Premises
Equipment
 WiMAX Access Points
 IEEE 802.16 WiMAX Systems
16
15
14
13
BIAS VCC 1
12 RF OUT
RF IN 2
1^st
Stage
Input
Match
2^nd
3^rd
Stage
Stage
Interstage
Match
Interstage
Match
11 RF OUT
PDOWN 3
10 RF OUT
Detector
Bias
VREG1 4
9 GND
5
6
7
8
Functional Block Diagram
Product Description
The RF5623 is a linear power amplifier IC designed specifically for WiMAX
medium power applications. The device is manufactured on an advanced
InGaP Heterojunction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in 802.16e transmitters. The
device is provided in a 3mmx3mmx0.45mm, 16-pin, leadless chip carrier
with a backside ground. The RF5623 is designed to maintain linearity over
a wide range of conditions and power outputs.
DS120213
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at ([phone] or [e-mail].
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