M16C5M Datasheet, PDF (94/159 Pages) Renesas Technology Corp – RENESAS MCU

M16C/5M Group, M16C/57 Group
5. Electrical Characteristics
J-Version, V_CC = 5 V
Table 5.16 Electrical Characteristics (2)
T_opr = −40°C to 85°C unless otherwise specified.
Symbol Parameter
Measuring Condition
Standard
Unit
Min. Typ. Max.
f_(BCLK) = 32 MHz,
XIN = 8 MHz (square wave), PLL multiply-by-8
125 kHz on-chip oscillator operates
High speed mode
f_(BCLK) = 20 MHz,
XIN = 20 MHz (square wave),
125 kHz on-chip oscillator operates
f_(BCLK) = 16 MHz,
XIN = 16 MHz (square wave),
125 kHz on-chip oscillator operates
Main clock stops
40 MHz on-chip oscillator operates
125 kHz on-chip oscillator operates
40 MHz on-chip oscillator ^{No division}
mode
Main clock stops
40 MHz on-chip oscillator operates
125 kHz on-chip oscillator operates
Divide-by-8
Power Supply
Main clock stops
Current
40 MHz on-chip oscillator stops
(V_CC = 4.2V to 5.5 125 kHz on-chip oscillator ^{125 kHz on-chip oscillator operates}
V)
mode
Divide-by-8
I_CC
In single-chip
mode, the output
FMR22 = FMR23 = 1 (Low-current
consumption read mode)
pins are open and
other pins are
V_SS
Low power mode
f_(BCLK) = 32 kHz
On Flash memory ⁽²⁾
FMR22 = FMR23 = 1 (Low-current
consumption read mode)
Wait mode
Main clock stops
40 MHz on-chip oscillator stops
125 kHz on-chip oscillator operates
Peripheral clock operates
T_opr = 25°C
Main clock stops
40 MHz on-chip oscillator stops
125 kHz on-chip oscillator operates
Peripheral clock operates
T_opr = 85°C
Stop mode
T_opr = 25°C
T_opr = 85°C
During flash memory
program
f_(BCLK) = 10 MHz, PM17 = 1 (one wait)
V_CC = 5.0 V
During flash memory
erase
f_(BCLK) = 10 MHz, PM17 = 1 (one wait)
V_CC = 5.0 V
I_det2
Low Voltage Detection Dissipation Current
I_det0
Reset Area Detection Dissipation Current
25 45 mA
21 39 mA
17
mA
21 39 mA
6
mA
190 580 μA
200
μA
25
μA
55
μA
3
15 μA
30
μA
20.0
mA
30.0
mA
3
μA
6
μA
Note:
1. This indicates the memory in which the program to be executed exists.
REJ03B0267-0101 Rev.1.01
Jul 23, 2010
Page 94 of 156