M16C5M Datasheet, PDF (107/159 Pages) Renesas Technology Corp – RENESAS MCU

M16C/5M Group, M16C/57 Group
5. Electrical Characteristics
J-Version, V_CC = 3 V
Table 5.33 Electrical Characteristics (2)
Topr = −40°C to 85°C unless otherwise specified.
Symbol Parameter
Measuring Condition
Standard
Unit
Min. Typ. Max.
f_(BCLK) = 32 MHz,
XIN = 8 MHz (square wave), PLL multiply-by-8
125 kHz on-chip oscillator operates
23 43 mA
High speed mode
f_(BCLK) = 20 MHz,
XIN = 20 MHz (square wave),
125 kHz on-chip oscillator operates
20 38 mA
f_(BCLK) = 16 MHz,
XIN = 16 MHz (square wave),
125 kHz on-chip oscillator operates
16
mA
40 MHz on-chip oscillator
mode
Main clock stops
40 MHz on-chip oscillator operates
125 kHz on-chip oscillator operates
No division
Main clock stops
40 MHz on-chip oscillator operates
125 kHz on-chip oscillator operates
Divide-by-8
20 38 mA
6
mA
Power Supply
Current
(V_CC = 3.0 V to 3.6
125 kHz on-chip oscillator
mode
Main clock stops
40 MHz on-chip oscillator stops
125 kHz on-chip oscillator operates
Divide-by-8
V)
I_CC
In single-chip
FMR22 = FMR23 = 1 (Low-current
consumption read mode)
mode, the output
pins are open and
f_(BCLK) = 32 kHz
other pins are
VSS
Low power mode
On Flash memory ⁽¹⁾
FMR22 = FMR23 = 1 (Low-current
consumption read mode)
190 580 μA
200
μA
Wait mode
Main clock stops
40 MHz on-chip oscillator stops
125 kHz on-chip oscillator operates
Peripheral clock operates
Topr = 25°C
Main clock stops
40 MHz on-chip oscillator stops
125 kHz on-chip oscillator operates
Peripheral clock operates
T_opr = 85°C
25
μA
55
μA
Stop mode
T_opr = 25°C
T_opr = 85°C
2
12 μA
30
μA
During flash memory
program
f_(BCLK) = 10 MHz, PM17 = 1 (one wait)
V_CC = 3.0 V
20.0
mA
During flash memory
erase
f_(BCLK) = 10 MHz, PM17 = 1 (one wait)
V_CC = 3.0 V
30.0
mA
I_det2
Low Voltage Detection Dissipation Current
3
μA
I_det0
Reset Area Detection Dissipation Current
6
μA
Note:
1. This indicates the memory in which the program to be executed exists.
REJ03B0267-0101 Rev.1.01
Jul 23, 2010
Page 107 of 156