NP80N04NUG Datasheet, PDF (9/12 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
Coss
1000
VGS = 0 V
f = 1 MHz
100
0.01
0.1
Crss
1
10
100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35
14
30
12
VDD = 32 V
25
20 V
10
8V
20
8
15
10
5
0
0
6
VGS
4
VDS
2
ID = 80 A
0
20
40
60
80 100
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
NP80N04NUG, NP80N04PUG
1000
SWITCHING CHARACTERISTICS
100
td(on)
td(off)
10
tr
tf
VDD = 20 V
VGS = 10 V
RG = 0 Ω
1
0.1
1
10
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
10 V
10
VGS = 0 V
1
0.1
0.01
0
Pulsed
0.2 0.4 0.6 0.8 1 1.2 1.4
VF(S-D) - Source to Drain Voltage - V
di/dt = 100 A/μs
VGS = 0 V
10
0.1
1
10
100
IF - Diode Forward Current - A
Data Sheet D19799EJ1V0DS
7