NP80N04NUG Datasheet, PDF (10/12 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

PACKAGE DRAWINGS (Unit: mm)
TO-262 (MP-25SK)
10.0±0.2
4.45±0.2
1.3±0.2
4
123
2.54 TYP.
1.27±0.2
0.8±0.1
2.54 TYP.
0.5±0.2
2.5±0.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
NP80N04NUG, NP80N04PUG
TO-263 (MP-25ZP)
No plating
10.0 ±0.3
7.88 MIN.
4
0.5
0.75 ±0.2
2.54
12 3
4.45 ±0.2
1.3 ±0.2
0.025
to 0.25
0.6 _±0.2
0 _{to 8˚}
0.25
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
8
Data Sheet D19799EJ1V0DS