NP80N04NUG Datasheet, PDF (8/12 Pages) Renesas Technology Corp – MOS FIELD EFFECT TRANSISTOR

NP80N04NUG, NP80N04PUG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
VGS = 10 V
Pulsed
8
6
4
2
NP80N04NUG
0
1
10
100
1000
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
ID = 40 A
Pulsed
8
6
4
2
NP80N04NUG
0
0
4
8
12
16
20
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
VGS = 10 V
ID = 40 A
8 _Pulsed
6
4
2
0
-75
NP80N04NUG
-25 25 75 125 175 225
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
10
VGS = 10 V
Pulsed
8
6
4
2
NP80N04PUG
0
1
10
100
1000
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
ID = 40 A
Pulsed
8
6
4
2
NP80N04PUG
0
0
4
8
12
16
20
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
VGS = 10 V
ID = 40 A
8 _Pulsed
6
4
2
0
-75
NP80N04PUG
-25 25 75 125 175 225
Tch - Channel Temperature - °C
6
Data Sheet D19799EJ1V0DS