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HN58X2508I Datasheet, PDF (9/29 Pages) Renesas Technology Corp – Electrically Erasable and Programmable Read Only Memory
◁
HN58X2508I/HN58X2516I
(Ta = −40 to +85°C, VCC = 1.8 V to 5.5 V)
Parameter
Symbol Alt
Min
Max
Clock frequency
fC
fSCK

3
S active setup time
tSLCH
tCSS1
100

S not active setup time
tSHCH
tCSS2
100

S deselect time
tSHSL
tCS
150

S active hold time
tCHSH
tCSH
100

S not active hold time
tCHSL

100

Clock high time
tCH
tCLH
150

Clock low time
tCL
tCLL
150

Clock rise time
tCLCH
tRC

1
Clock fall time
tCHCL
tFC

1
Data in setup time
tDVCH
tDSU
30

Data in hold time
tCHDX
tDH
50

Clock low hold time after HOLD not tHHCH

active
140

Clock low hold time after HOLD active tHLCH

Clock high setup time before HOLD tCHHL

active
90

120

Clock high setup time before HOLD not tCHHH

active
120

Output disable time
tSHQZ
tDIS

200
Clock low to output valid
tCLQV
tV

120
Output hold time
tCLQX
tHO
0

Output rise time
tQLQH
tRO

100
Output fall time
tQHQL
tFO

100
HOLD high to output low-Z
tHHQX
tLZ

100
HOLD low to output high-Z
tHLQZ
tHZ

100
Write time
tW
tWC

8
Notes: 1. tCH + tCL ≥ 1/fC
2. Value guaranteed by characterization, not 100% tested in production.
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
Notes
1
1
2
2
2
2
2
2
2
Rev.2.00, Aug.19.2004, page 9 of 27
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